Properties of Ion Implanted and UHV-CVD Grown Si:Er

Properties of Ion Implanted and UHV-CVD Grown Si:Er

著者名:

掲載資料名:

Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

422

発行年:

1996

開始ページ:

41

出版情報:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993259 [1558993258]

言語:

英語

請求記号:

M23500/422

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019372
シリーズID:	PA00000011
会議名:	Symposium on rare earth doped semiconductors
回次:	2nd
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.10

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