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THE CHARACTERISTICS OF THE LATERAL THICKNESS MODULATION IN STRAINED LAYER GaxIn1-xAs MULTIPLE QUANTUM WELL STRUCTURES GROWN BY MOVPE

著者名:
掲載資料名:
Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
340
発行年:
1994
開始ページ:
337
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992405 [1558992405]
言語:
英語
請求記号:
M23500/340
資料種別:
国際会議録

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