1.48-ｦﾌm InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers

1.48-ｦﾌm InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers

著者名:

An,H. ( Jilin Univ. )
Yang,S.
Sun,H.
Peng,Y.
Liu,S.

掲載資料名:

Semiconductor Lasers II

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2886

発行年:

1996

開始ページ:

300

終了ページ:

304

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819422873 [0819422878]

言語:

英語

請求記号:

P63600/2886

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019347
シリーズID:	PA00000029
会議名:	Photonics China : Semiconductor Lasers
回次:	1996 : 2nd
会議開催地:	Beijing, China
会議開催年:	1996.11.06-1996.11.07

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