Design and fabrication of 980-nm InGaAs/A1GaAs quantum well lasers with low beam divergence

Design and fabrication of 980-nm InGaAs/A1GaAs quantum well lasers with low beam divergence

著者名:

Yang,G. ( Institute of Semiconductors )
Xu,J.
Xu,Z.
Chen,L.
Wang,Q.

掲載資料名:

Semiconductor Lasers II

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2886

発行年:

1996

開始ページ:

258

終了ページ:

263

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819422873 [0819422878]

言語:

英語

請求記号:

P63600/2886

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019347
シリーズID:	PA00000029
会議名:	Photonics China : Semiconductor Lasers
回次:	1996 : 2nd
会議開催地:	Beijing, China
会議開催年:	1996.11.06-1996.11.07

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