Degradation of thin SiO2 sidewall spacers during the selective epitaxial growth for the fabrication of raised source/drain MOSFETs

Degradation of thin SiO2 sidewall spacers during the selective epitaxial growth for the fabrication of raised source/drain MOSFETs

著者名:

Unnikrishnan,S. ( Univ.of Texas/Austin )

掲載資料名:

Microelectronic Manufacturing Yield, Reliability, and Failure Analysis

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2635

発行年:

1995

開始ページ:

246

終了ページ:

255

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819420015 [0819420018]

言語:

英語

請求記号:

P63600/2635

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019322
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Microelectronic Manufacturing : Microelectronic Manufacturing Yield,Reliability, and Failure Analysis
回次:	1995
会議開催地:	Austin, TX, USA
会議開催年:	1995.10.25-1995.10.26

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