GaN doped with sulphur
- 著者名:
Saxier,A. Kung,P. Zhang,X. Walker,D. Soiomon,J. Ahoujja,M. Mitchel,W.C. Vydyanath,H.R. Razeghi,M. - 掲載資料名:
- Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 258-263
- 発行年:
- 1997
- 巻:
- Part2
- 開始ページ:
- 1161
- 終了ページ:
- 1166
- 出版情報:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497881 [0878497889]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Narosa Publishing House |
MRS - Materials Research Society |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
MRS - Materials Research Society |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
6
国際会議録
Recent advances in III-nitride materials: characterrization and device applications (Invited Paper)
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |