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Raman scattering analysis of defects in 6H-SiC induced by ion implantation

著者名:
Perez-Rodriguez,A.
Gonzalez-Varona,O.
Calvo-Barrio,L.
Morante,J.R.
Wirth,H.
Panknin,D.
Skorupa,W.
さらに 2 件
掲載資料名:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
シリーズ名:
Materials science forum
シリーズ巻号:
258-263
発行年:
1997
巻:
Part2
開始ページ:
727
終了ページ:
732
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497881 [0878497889]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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