Blank Cover Image

Theory of 3d transition metal defects in 3C-SiC.(Invited)

著者名:
Overhof,H.  
掲載資料名:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
シリーズ名:
Materials science forum
シリーズ巻号:
258-263
発行年:
1997
巻:
Part2
開始ページ:
677
終了ページ:
684
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497881 [0878497889]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Theory of 3d Transition Metal Defects in 3C SiC

Overhof, Harald

MRS - Materials Research Society
7 国際会議録 EXCITONIC RECOMBINATION AT A TRANSITION-METAL RELATED DEFECT IN SILICON

McGuigan, K.G., Henry, M.O., Lightowlers, E.C., Nazare, M.H.

Materials Research Society
2 国際会議録 Ab Initio Calculation of Shallow Defects: Results for P-Related Donors in SiC

Gerstmann, U., Rauls, E., Overhof, H., Frauenheim, T.

Trans Tech Publications
8 国際会議録 FORMATION OF CUBIC Ll2 PHASES FORM Al3Ti AND Al3 Zr BY TRANSITION METAL SUBSTITUTIONS FOR Al

Sparks, C. J., Porter, W. D., Schneibel, J. H., Oliver, W. C., Golec, C. G.

Materials Research Society
3 国際会議録 Electronic structure of isolated aluminium point defects and defect pairs in Si

Overhof,H., Corradi,G.

Trans Tech Publications
9 国際会議録 Nitrogen-Vacancy Complexes in SiC ? Final Annealing Products of the Silicon Vacancy?

Gerstmann, U., Rauls, E., Frauenheim, Th., Overhof, H.

Trans Tech Publications
4 国際会議録 The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory

Gerstmann, U., Gali, A., Deak, P., Frauenheim, Th., Overhof, H.

Trans Tech Publications
10 国際会議録 * THE IMPACT OF A LONG-RANGED RANDOM POTENTIAL ON THE TRANSPORT PROPERTIES OF AMORPHOUS SEMICONDUCTORS

Overhof, H.

Materials Research Society
5 国際会議録 A Predictive Molecular Orbital Theory Applied Defects and Structures of Transition Metal Oxides

Anderson B. Alfred, Grimes W. Robin, Heuer H. Arthur

Plenum Press
11 国際会議録 Ab-Initio Calculation of the Hyperfine Fields for Deep Al Donors in GaAs under Pressure

Overhof,H.

Trans Tech Publications
6 国際会議録 ATOMIC DEFECTS IN TRANSITION METAL CARBIDES AND SiC STUDIED BY POSITRON ANNIHILATION

Rempel, A. A., Scaefer, H. -E., Forster, M., Girka, A. I.

MRS - Materials Research Society
12 国際会議録 The Atomic Structure of Mn4 Clusters in Silicon

Overhof,H.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12