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Localised vibrational mode absorption of silicon donors and beryllium acceptors in MBE GaAs,InAs and InSb

著者名:
Addinall,R.
Newman,R.C.
Ferguson,I.T.
Mohades-Kassai,A.
Brozel,M.R.
Sharma,V.K.M.
McPhail,D.
Sangster,M.J.L.
さらに 3 件
掲載資料名:
Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991
シリーズ名:
Materials science forum
シリーズ巻号:
83-87
発行年:
1992
巻:
Pt.2
開始ページ:
1027
終了ページ:
1032
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496280 [0878496289]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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