DX centers in Si-doped Al.Ga1-xAs containing boron

DX centers in Si-doped Al.Ga1-xAs containing boron

著者名:

掲載資料名:

Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991

シリーズ名:

Materials science forum

シリーズ巻号:

83-87

発行年:

1992

巻:

Pt.2

開始ページ:

829

終了ページ:

834

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496280 [0878496289]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019283
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors
回次:	16th
会議開催地:	Bethlehem, PA, USA
会議開催年:	1991.07.22-1991.07.26

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2 国際会議録 Alloy Effects on Emission Rates for Deep Donors(DX Centers)in AlxGa1-xAS with very low AlAS Mole Fraction Mooney,P.M., Theis,T.N., Wright,S.L. Trans Tech Publications	8 国際会議録 CHARGE TRAPPING BY DEEP DONORS IN SI-DOPED A1XGa1-Xas Mooney, P. M., Caswell, N. S., Solomon, P. M., Wright, S., L. Materials Research Society
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