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Electrical properties of Yb.Er doped InP

著者名:
Seghier,D.
Benyattou,T.
Bremond,G.
Ducroquet,F.
Mar-chand,J.-J.
Guillot,G.
Lhomer,C.
Larnbert,B.
Toudic,Y.
Corre,A.Le.
さらに 5 件
掲載資料名:
Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991
シリーズ名:
Materials science forum
シリーズ巻号:
83-87
発行年:
1992
巻:
Pt.2
開始ページ:
677
終了ページ:
682
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496280 [0878496289]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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