Blank Cover Image

A new defect observed in annealed highly phosphorus doped electron-irradiated silicon

著者名:
掲載資料名:
Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991
シリーズ名:
Materials science forum
シリーズ巻号:
83-87
発行年:
1992
巻:
Pt.1
開始ページ:
333
終了ページ:
338
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496280 [0878496289]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 ANNEALING OF IRRADIATED HIGHLY PHOROUSDOPED CZOCHRALSKI SILICON.

SVENSSON,B.G., LINDSTROM,J.L.

Trans Tech Publications
7 国際会議録 Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon

Frens,A.M., Bennebroek,M.T., Zakrzewski,A., Schmidt,J., Chen,W.M., Janzen,E., Lindstrom,J.L., Monemar,B.

Trans Tech Publications
2 国際会議録 Annealing of Electron Irradiated P-,As-,Sb- and Bi-Doped Czochralski Silicon

Hallberg,T., Lindstrom,J.L., Svensson,B.G., Swiatek,K.

Trans Tech Publications
8 国際会議録 DEFECT-FORMATION DEPENDENCE ON GROUP V-DOPANT ATOMS IN ELECTRON-IRRADIATED SILICON

Awadelkarim, O.O., Henry, A., Monemar, B., Lindstrom, J.L.

Materials Research Society
3 国際会議録 Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C

Aberg,D., Hallberg,T., Svensson,B.G., Lindstrom,J.L., Kleverman,M.

Trans Tech Publications
9 国際会議録 Interaction between copper and irradiation-induced defects in crystalline silicon

Svensson,B.G., Aboelfotoh,M.O.

Trans Tech Publications
4 国際会議録 Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C

Lindstrom,J.L., Hallberg,T., Aberg,D., Svensson,B.G., Murin,L.I., Markevich,V.P.

Trans Tech Publications
10 国際会議録 Phosphorus Diffusion in Silicon; Influence of Annealing Conditions

Christensen, J.S., Kuznetsov, A. Yu., Radamson, H.H., Svensson, B.G.

Materials Research Society
5 国際会議録 OPTICALLY DETECTED MAGNETIC RESONANCE OF A HYDROGEN-RELATED COMPLEX DEFECT IN SILICON

Chen, W.M., Awadelkarim, O.O., Monemar, B., Lindstrom, J.L., Oehrlein, G.S.

Materials Research Society
11 国際会議録 Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy

Alfieri, G., Grossner, U., Monakhov, E.V., Svensson, B.G., Steeds, J.W., Sullivan, W.

Trans Tech Publications
6 国際会議録 OPTICAL PROPERTIES OF NOVEL VIBRONIC BANDS IN ELECTRON-IRRADIATED TIN DOPED SILICON

Svensson, J.H., Monemar, B., Svensson, B.G.

Materials Research Society
12 国際会議録 A New Photoluminescent Center in Mercury-Doped Silicon

Henry,A., Monemar,B., Bergman,J.P., Lindstrom,J.L., Zhang,Y., Corbett,J.W.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12