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In-situ HVEM study of dopant dependent defect generation in silicon during I MeV electron irradiation

著者名:
掲載資料名:
Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991
シリーズ名:
Materials science forum
シリーズ巻号:
83-87
発行年:
1992
巻:
Pt.1
開始ページ:
303
終了ページ:
308
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496280 [0878496289]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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