Imaging contrast improvement for 160-nm line features using subresolution assist features with binary,six percent ternary attenuated phase-shift mask with process-tuned resist

Imaging contrast improvement for 160-nm line features using subresolution assist features with binary,six percent ternary attenuated phase-shift mask with process-tuned resist

著者名:

掲載資料名:

Optical microlithography XII : 17-19 March 1999, Santa Clara, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3679

発行年:

1999

巻:

Part1

開始ページ:

55

終了ページ:

67

出版情報:

Bellingham, Wash., USA: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819431530 [0819431532]

言語:

英語

請求記号:

P63600/3679

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019002
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Optical microlithography
回次:	1999 : 12th
会議開催地:	Santa Clara, CA, USA
会議開催年:	1999.03.17-1999.03.19

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