Optical properties of InGaAsN:a new 1-eV bandgap material system
- 著者名:
Jones,E.D. ( Sandia National Labs. ) Modine,N.A. Allerman,A.A. Fritz,I.J. Kurtz,S.R. Wright,A.F. Tozer,S.T. Wei,X. - 掲載資料名:
- Light-emitting diodes : research, manufacturing, and applications III : 27-28 January 1999, San Jose, California
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3621
- 発行年:
- 1999
- 開始ページ:
- 52
- 終了ページ:
- 63
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819430915 [0819430919]
- 言語:
- 英語
- 請求記号:
- P63600/3621
- 資料種別:
- 国際会議録
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6
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The Growth of InGaAsN for High-Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition
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