193-nm thin-layer imaging performance of 140-nm contact hole patterning and DOE dry development process optimization of multilayer resist process
- 著者名:
- Kim,W.D. ( International SEMATECH(USA)and Texas Instruments Inc. )
- Hwang,S.B.
- Rich,G.K.
- Graffenberg,V.L.
- 掲載資料名:
- Advances in resist technology and processing XVII : 28 February - 1 March 2000, Santa Clara, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3999
- 発行年:
- 2000
- 巻:
- Part2
- 開始ページ:
- 1028
- 終了ページ:
- 1045
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819436177 [0819436178]
- 言語:
- 英語
- 請求記号:
- P63600/3999
- 資料種別:
- 国際会議録
類似資料:
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
2
国際会議録
193-nm photoresists at 130-nm node:which lithographic performances for which chemical platform?
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |