ArF photoresist containing novel acid labile cross-linker for high contrast and PED stability

ArF photoresist containing novel acid labile cross-linker for high contrast and PED stability

著者名:

Lee,G. ( Hyundai Electronics Industries Co.,Ltd. )

掲載資料名:

Advances in resist technology and processing XVII : 28 February - 1 March 2000, Santa Clara, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3999

発行年:

2000

巻:

Part1

開始ページ:

13

終了ページ:

22

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819436177 [0819436178]

言語:

英語

請求記号:

P63600/3999

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018975
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Advances in resist technology and processing
回次:	2000 : 17th
会議開催地:	Santa Clara, CA, USA
会議開催年:	2000.02.28-2000.03.01

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2 国際会議録 Novel 193-nm single-layer resist containing a multifunctional monomer Lee, G., Koh, C. -W., Jung, J. -C., Jung, M. -H., Kim, H. -S., Baik, K. -H., Choi, I. -H. SPIE - The International Society of Optical Engineering	8 国際会議録 "Novel chemically amplified positive resist containing acetal-type crosslinker of poly(3,3'-dimethoxypropene) for 193-nm top surface imaging process" Koh,C.-W., Jung,J.-C., Kim,M.-S., Kong,K.-K., Lee,G., Jung,M.-H., Kim,J.-S., Shin,K.-S. SPIE-The International Society for Optical Engineering
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