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Maskless lateral epitaxial overgrowth of GaN on sapphire

著者名:
Fini, P.
Marchand, H.
Ibbetson, J. P.
Moran, B.
Zhao, L.
DenBaars, S. P.
Speck, J. S.
Mishra, U. K.
さらに 3 件
掲載資料名:
Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
572
発行年:
1999
開始ページ:
315
出版情報:
Warrendale, PA: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558994799 [1558994793]
言語:
英語
請求記号:
M23500/572
資料種別:
国際会議録

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