Blank Cover Image

Pendeo-epitaxial growth GaN on SiC and silicon substrates via metalorganic chemical vapor deposition

著者名:
Linthicum, K. J.
Gehrke, T.
Thomson, D.
Ronning, C.
Carlson, E. P.
Zorman, C. A.
Mehregany, M.
Davis, R. F.
さらに 3 件
掲載資料名:
Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
572
発行年:
1999
開始ページ:
307
出版情報:
Warrendale, PA: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558994799 [1558994793]
言語:
英語
請求記号:
M23500/572
資料種別:
国際会議録

類似資料:

1 国際会議録 Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques

Linthicum, K. J., Gehrke, T., Thomson, D. B., Tracy, K. M., Carlson, E. P., Smith, T. P., Zheleva, T. S., Zorman, C. A., …

MRS - Materials Research Society
7 国際会議録 Characterization of Be-Implanted GaN Annealed at High Temperatures

Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., Davis, R. F.

MRS - Materials Research Society
2 国際会議録 *Pendeo-epitaxial growth and characterization of GaN and related materials on 6H-SiC(0001) and Si(111) substrates

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., Mehregany, M.

MRS-Materials Research Society
8 国際会議録 Lateral- and Pendeo-epitaxial Growth and Defect Reduction in GaN Thin Films

Davis, R. F., Nam, O. -H., Zheleva, T. S., Gehrke, T., Linthicum, K. J., Rajagopal, P.

Trans Tech Publications
3 国際会議録 Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy

Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Davis, R. F.

MRS - Materials Research Society
9 国際会議録 Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate

Gehrke, T., Linthicum, K. J., Thomson, D. B., Rajagopal, P., Batchelor, A. D., Davis, R. F.

MRS - Materials Research Society
4 国際会議録 Growth and Characterization of GaN and AlxGa1-xN Thin Films Achieved Via Lateral- and /or Pendeo-Epitaxial Overgrowth on 6H-SiC(0001) Substrates

Davis, R. F., Nam, O-H., Zheleva, T. S., Bremser, M. D., Linthicum, K. J., Gehrke, T., Rajagopal, P., Thomson, D. B., …

MRS - Materials Research Society
10 国際会議録 Pendeo-Epitaxy-A New Approach for Lateral Growth of Gallium Nitride Structures

Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Carlson, E., Ashmawi, W. M., …

MRS - Materials Research Society
5 国際会議録 Peudeo-EpitaxyTM process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition

Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Carlson, E. P., Robin, B. M., Davis, R. F.

Trans Tech Publications
11 国際会議録 Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition

Y. Fu, U. Ozgur, Q. Fan, N. Biyikli, S. Chevtchenko, H. Morkoc, Y. Ke, R. Devaty, W. J. Choyke, C. K. Inoki, T. S. Kuan

SPIE - The International Society of Optical Engineering
6 国際会議録 Advanced PENDEOEPITAXY(TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition

Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Davis, R. F.

MRS-Materials Research Society
12 国際会議録 Photoluminescence characterization of Mg implanted GaN

Ronning, C., Hofsass, H. C., Stotzler, A., Deicher, M., Carlson, E. P., Hartlieb, P. J., Gehrke, T., Rajagopal, P., …

MRS-Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12