On the role of foreign atoms in the optimization of 3C-SiC/Si heterointerfaces

On the role of foreign atoms in the optimization of 3C-SiC/Si heterointerfaces

著者名:

Masri, P.

掲載資料名:

Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

572

発行年:

1999

開始ページ:

213

出版情報:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994799 [1558994793]

言語:

英語

請求記号:

M23500/572

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018972
シリーズID:	PA00000011
会議名:	Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 : Symposium
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.08

類似資料:

1 国際会議録 The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si Pezoldt, J., Masri, P., Rouhani Laridjani, M., Averous, M., Wohner, T., Schaefer, J. A., Stauden, Th., Ecke, G., … Trans Tech Publications	7 国際会議録 Optimization of Interface and Interphase Systems: The Case of SiC and III-V Nitrides Masri, P., Pezoldt, J., Sumiya, M., Averous, M. Trans Tech Publications
2 国際会議録 Structural and Elasticity-Based Properties of SiC-based Interfaces: Their Relevance to the Heteroepitaxy of III-V Nitrides Masri, P., Laridjani, M. Rouhani, Stauden, Th., Pezoldt, J., Averous, M. Materials Research Society	8 国際会議録 High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates Weih, P., Cimalla, V., Forster, C., Pezoldt, J., Stauden, Th., Spiess, L., Romanus, H., Hermann, M., Eickhoff, M., … Trans Tech Publications
3 国際会議録 From Precursor Atoms Towards Hetero-Phasec:Strain-Dynamics Induced Carbou-Rich Si1-xCx Phases Masri,P., Moreaud,N., Calas,J., Averous,M. Trans Tech Publications	9 国際会議録 Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si J. Pezoldt, C. Foerster, T. Stauden, V. Cimalla, F.M. Morales, C. Zgheib, P.M. Masri, O. Ambacher Trans Tech Publications
4 国際会議録 Silicon Carbide Buffer Layers for Nitride Growth on Si Masri, P., Herro, Z., Stauden, Th., Pezoldt, J., Sumiya, M., Averous, M. Trans Tech Publications	10 国際会議録 Characterization of SiC Grown on Ge Modified Silicon Substrates Pezoldt, J., Stauden, Th., Foerster, Ch., Masri, P. Materials Research Society
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6 国際会議録 In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces Wohner, T., Stauden, Th., Schaefer, J. A., Pezoldt, J. Trans Tech Publications	12 国際会議録 The Influence of Ge on the SiC Nucleation on (111)Si Surfaces Pezoldt, J., Woehner, T., Stauden, T., Schaefer, J.A., Masri, P. Trans Tech Publications

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