*SiC power electronic devices, MOSFETs and rectifiers

*SiC power electronic devices, MOSFETs and rectifiers

著者名:

Cooper, J. A.

掲載資料名:

Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

572

発行年:

1999

開始ページ:

3

出版情報:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994799 [1558994793]

言語:

英語

請求記号:

M23500/572

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018972
シリーズID:	PA00000011
会議名:	Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 : Symposium
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.08

類似資料:

1 国際会議録 Recent Advances in SiC Power Devices ,J.A.Cooper.Jr., Melloch,M.R., Woodall,J.M., Spitz,J., Schoen,K.J., Henning,J.P. Trans Tech Publications	7 国際会議録 Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC Ryu, S.-H., Agarwal, A., Richmond, J.T., Das, M.K., Lipkin, L.A., Palmour, J., Saks, N., Williams, J.R. Trans Tech Publications
2 国際会議録 A Dual-Metal-Trench Schcttky Pixrch-Rectifier in 4H SiC Schoen,K.J., Henning,J.P., Woodall,J.M., ,J.A.Cooper,Jr., Melloch,M.R. Trans Tech Publications	8 国際会議録 Processing and device performance of GaN power rectifiers Zhang, A. P., Dang, G. T., Cao, X. A., Cho, H., Ren, F., Han, J., Chyi, J-I., Lee, C-M., Nee, T-E., Chuo, C-C., Chi, … MRS-Materials Research Society
3 国際会議録 Silicon Carbide Power MOSFETs Melloch, M.R., Cooper, J.A., Jr., Tan, J., Spitz, J. Electrochemical Society	9 国際会議録 Impact of Material Defects on SiC Schottky Barrier Diodes Morisette, D.T., Cooper, J.A., Jr. Trans Tech Publications
4 国際会議録 Performance of SiC Bipolar (PiN) and Unipolar (SBD) Power Rectifiers in Current-Voltage-Frequency Parameter Space Morisette, D.T., Cooper, J.A., Jr. Trans Tech Publications	10 国際会議録 Impact of Material Defects on SiC Schottky Barrier Diodes Morisette, D.T., Cooper, J.A., Jr. Trans Tech Publications
5 国際会議録 Performance of SiC Bipolar (PiN) and Unipolar (SBD) Power Rectifiers in Current-Voltage-Frequency Parameter Space Morisette, D.T., Cooper J.A., Jr. Trans Tech Publications	11 国際会議録 High-Voltage Pulse Instabilities in SiC Schottky Diodes with Implanted Resistive Edge Terminations Morisette, D.T., Cooper, J.A., Jr. Trans Tech Publications
6 国際会議録 High-Voltage(2.6 kV)Lateral DMOSFETs in 4H-SiC Spitz,J., Melloch,M.R., J.A.Cooper,Jr, Capano,M.A. Trans Tech Publications	12 国際会議録 High-Voltage Pulse Instabilities in SiC Schottky Diodes with Implanted Resistive Edge Terminations Morisette, D.T., Cooper J.A., Jr Trans Tech Publications

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