Blank Cover Image

Improved characteristic temperature (T0) of a 1.3ｦﾌm GaInNAs/GaAs single-quantum-well laser diode through thermal annealing

著者名:
掲載資料名:
Thin films for optical waveguide devices and materials for optical limiting : symposium held November 30-December 3, 1999, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
597
発行年:
2000
開始ページ:
33
出版情報:
Warrendale, PA: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995055 [1558995056]
言語:
英語
請求記号:
M23500/597
資料種別:
国際会議録

類似資料:

1 国際会議録 GaInNAs/GaAs long-wavelength lasers (Invited Paper)

Kondow,M., Kitatani,T., Larson,M.C., Nakahara,K., Uomi,K., Inoue,H.

SPIE-The International Society for Optical Engineering
7 国際会議録 Long-wavelength-range laser diode using GaInNAs

Kondow,M., Nakatsuka,S., Kitatani,T., Yazawa,Y., Okai,M.

SPIE-The International Society for Optical Engineering
2 国際会議録 Progress in GaInNAs/GaAs long-wavelength vertical-cavity surface-emitting lasers (Invited Paper)

Larson,M.C., Kondow,M., Kitatani,T., Nakahara,K., Tamura,K., Yazawa,Y., Okai,M.O., Inoue,H., Uomi,K.

SPIE-The International Society for Optical Engineering
8 国際会議録 Novel high-frequency electroabsorption multiple-quantum-well waveguide modulator operating at 1.3ｦﾌm on GaAs substrates

Loi,K.K., Shen,L., Wieder,H.H., Chang,W.S.C.

SPIE-The International Society for Optical Engineering
3 国際会議録 1.3-ｦﾌm lnP-based n-type modulation-doped strained multiquantum well lasers for high-density parallel optical interconnections (Invited Paper)

Nakahara,K., Tsuchiya,T., Niwa,A., Uomi,K., Haga,T., Taniwatari,T., Toyonaka,T.

SPIE-The International Society for Optical Engineering
9 国際会議録 Effect of wavelength detuning on spectral and temperature characteristics of 1.3-ｦﾌm DFB lasers

Jeong,S.J., Kang,J.K., Oh,K.S., Kang,B.K., Kim,T.J., Sin,Y.K.

SPIE-The International Society for Optical Engineering
4 国際会議録 Extremely low threshold 1.3-ｦﾌm strained-MQW lasers for parallel high-speed optical interconnections

Uomi,K.

SPIE-The International Society for Optical Engineering
10 国際会議録 Effect of Thermal Annealing on the Photoluminescence Properties of a GaInNAs/GaAs Single Quantum Well

Grenouillet, Laurent, Bru-Chevallier, Catherine, Guillot, Gerard, Gilet, Philippe, Ballet, Philippe, Duvaut, Philippe, …

Materials Research Society
5 国際会議録 High-speed GaInNAs laser diodes

Kondow, M., Nakahara, K., Fujisaki, S., Tanaka, S., Kudo, M., Taniguchi, T., Terano, A., Uchiyama, H.

SPIE - The International Society of Optical Engineering
11 国際会議録 Properties of a high To 1.3 um GaInNAs/GaAs quantum well laser diode [6133-41]

Zhang, X., Gupta, J. A., Barrios, P. J., Pakulski, G., Wu, X., Delage, A., Hall, T. J.

SPIE - The International Society of Optical Engineering
6 国際会議録 High-quality GlnNAs active layers for 1.3-μm lasers

Kitatani,T., Kondow,M., Tanaka,T.

SPIE-The International Society for Optical Engineering
12 国際会議録 Effect of Interdiffusion on the Subbands in an In0.65Gs0.35As/GaAs Multiple-Quantum Well Structure on GaAs Substrate at 1.55ｦﾌm Operation Wavelength

Chan, M. C. Y., Li, E. Herbert, Chan, K. S.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12