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MEASUREMENT OF LATTICE RELAXATION DURING EPITAXY USING TUNNELING MICROSCOPY: Ge ON Si(111)

著者名:
掲載資料名:
Mechanisms of thin film evolution
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
317
発行年:
1994
開始ページ:
15
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992160 [1558992162]
言語:
英語
請求記号:
M23500/317
資料種別:
国際会議録

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