Deep Level Characterization of Interface-Engineered ZnSe Layers Grown by Molecular Beam Epitaxy on GaAs
- 著者名:
Hierro, A. Kwon, D. Ringel, S. A. Brillson, L. J. Young, A. P. Franciosi, A. - 掲載資料名:
- III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 535
- 発行年:
- 1999
- 開始ページ:
- 77
- 出版情報:
- Warrendale, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994416 [1558994416]
- 言語:
- 英語
- 請求記号:
- M23500/535
- 資料種別:
- 国際会議録
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5
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Electrical Characterization of Nitrogen Acceptors in p-ZnSe/p-GaAs Grown by Molecular-Beam Epitaxy
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