Kinetic Modelling of the Selective Epitaxy of GaAs on Patterned Substrates by HVPE. Application to the Conformal Grown of Low Defect Density GaAs Layers on Silicon

Kinetic Modelling of the Selective Epitaxy of GaAs on Patterned Substrates by HVPE. Application to the Conformal Grown of Low Defect Density GaAs Layers on Silicon

著者名:

Gil-Lafon, E.

掲載資料名:

III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

535

発行年:

1999

開始ページ:

33

出版情報:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994416 [1558994416]

言語:

英語

請求記号:

M23500/535

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018919
シリーズID:	PA00000011
会議名:	Symposium on II-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.03

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