Low-Temperature Formation of C54 TiSi2 By-Passing the C49 Phase: Effect of Si Crystallinity, Metallic Impurities and Applications to 0.10 ｦﾌm CMOS

Low-Temperature Formation of C54 TiSi2 By-Passing the C49 Phase: Effect of Si Crystallinity, Metallic Impurities and Applications to 0.10 ｦﾌm CMOS

著者名:

Kittl, J. A.

掲載資料名:

Advanced interconnects and contact materials and processes for future integrated circuits : symposium held April 13-16, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

514

発行年:

1998

開始ページ:

201

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994201 [1558994203]

言語:

英語

請求記号:

M23500/514

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018917
シリーズID:	PA00000011
会議名:	Symposium on advanced interconnects and contact materials and processes for future integrated circuits
回次:	1998
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.16

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