Oxygen-Related Defects in In0.5(AlxGa1-x)0.5P Grown by MOVPE
- 著者名:
- 掲載資料名:
- Infrared applications of semiconductors II : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 484
- 発行年:
- 1998
- 開始ページ:
- 611
- 出版情報:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993891 [1558993894]
- 言語:
- 英語
- 請求記号:
- M23500/484
- 資料種別:
- 国際会議録
類似資料:
SPIE - The International Society for Optical Engineering |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
MRS - Materials Research Society |
SPIE - The International Society of Optical Engineering |
5
国際会議録
Synthesis of a buried oxide in related Si0.5Ge0.5 material using high energy oxygen implantation
Electrochemical Society |
MRS - Materials Research Society |
6
国際会議録
PHOTOREFLECTANCE OF A GaAs/In0.5Ga0.5P(ORDERED) SINGLE QUANTUM WELL GROWN BY ATOMIC LAYER EPITAXY
Materials Research Society |
MRS - Materials Research Society |