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W, WSix and Ti/Al Low Resistance Ohmic Contacts to InGaN, InN and InAlN

著者名:
Vartuli, C. B.
Pearton, S. J.
Abernathy, C. R.
MacKenzie, J. D.
Shul, R. J.
Zolper, J. C.
Lovejoy, M. L.
Baca, A. G.
Hagerott-Crawford, M.
さらに 4 件
掲載資料名:
Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
421
発行年:
1996
開始ページ:
373
出版情報:
Pittsburgh, Penn: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993242 [155899324X]
言語:
英語
請求記号:
M23500/421
資料種別:
国際会議録

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1 国際会議録 Current Transport in W and Wsix Ohmic Contacts to InGaN and InN

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7 国際会議録 Behavior of W and WSix Contact Metallization on n- and P-Type GaN

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2 国際会議録 Dry Etch Damage in InN, InGaN and InAlN

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3 国際会議録 Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN

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