ECR Etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2

ECR Etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2

著者名:

Shul, R. J.

掲載資料名:

Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

421

発行年:

1996

開始ページ:

245

出版情報:

Pittsburgh, Penn: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993242 [155899324X]

言語:

英語

請求記号:

M23500/421

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018908
シリーズID:	PA00000011
会議名:	Symposium on compound semiconductor electronics and photonics
回次:	1996
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.10

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