A Relationship Between Interface Trap Density and Transconductance in 6H-SiC Enhancement Mode Field Effect Transistors

A Relationship Between Interface Trap Density and Transconductance in 6H-SiC Enhancement Mode Field Effect Transistors

著者名:

掲載資料名:

Covalent ceramics III - science and technology of non-oxides : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

410

発行年:

1996

開始ページ:

69

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993136 [1558993134]

言語:

英語

請求記号:

M23500/410

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018907
シリーズID:	PA00000011
会議名:	Symposium on covalent ceramics
回次:	3rd
会議開催地:	Boston, MA, USA
会議開催年:	1995.11.27-1995.11.30

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