Copper in silicon:quantitative analysis of internal and proximity gettering

Copper in silicon:quantitative analysis of internal and proximity gettering

著者名:

McHugo,S.A.

掲載資料名:

Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

シリーズ名:

Materials science forum

シリーズ巻号:

258-263

発行年:

1997

巻:

Part1

開始ページ:

461

終了ページ:

466

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497874 [0878497870]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018828
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors
回次:	19th
会議開催地:	Aveiro, Portugal
会議開催年:	1997.07.00

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1 国際会議録 Progress in Understanding the Physics of Copper in Silicon Istratov,A.A., Flink,C., Baluasubramanian,S., Weber,E.R., Hieslmair,H., McHugo,S.A., Hedemann,H., Seibt,M., Schroter,W. Electrochemical Society, SPIE-The International Society for Optical Engineering	7 国際会議録 Studies of the Microscopic Nature of Cu Pairs in Silicon Istratov, A. A., Heiser, T., Hieslmair, H., Flink, C., Weber, E. R. MRS - Materials Research Society
2 国際会議録 Competition Between Gettering by Implantation-Induced Cavities in Silicon and Internal Gettering Associated with SiO2 Precipitation McHugo, S. A., Weber, E. R., Myers, S. M., Petersen, G. A. MRS - Materials Research Society	8 国際会議録 Rate limiting mechanism of transition metal gettering in multicrystalline silicon McHugo,S.A., Thompson,A.C., Imaizumi,M., Hieslmair,H., Weber,E.R. Trans Tech Publications
3 国際会議録 Competition Between Gettering by Implantation-Induced Cavities in Silicon and Internal Gettering Associated With SiO2 Precipitation McHugo, S. A., Weber, E. R., Myers, S. M., Petersen, G. A. MRS - Materials Research Society	9 国際会議録 Charge State of Copper-Silicide Precipitates in Silicon and Its Application to the Understanding of Copper Precipitation Kinetics Istratov, A. A., Vyvenko, O. F., Flink, C., Heiser, T., Hieslmair, H., Weber, E. R. MRS - Materials Research Society
4 国際会議録 ANALYSIS OF IRON PRECIPITATION IN SILICON AS A BASIS FOR GETIERING SIMULATIONS Hieslmair, H., Istratov, A.A., McHugo, S.A., Flink, C., Weber, E.R. Electrochemical Society	10 国際会議録 Precipitation of iron in FZ and CZ silicon Hieslmair,H., Istratov,A.A., McHugo,S.A., Flink,C., Weber,E.R. Trans Tech Publications
5 国際会議録 ELECTRICAL AND RECOMBINATIVE PROPERTIES OF PRECIPTATED AND INTERSTITIAL COPPER IN SILICON Istratov, A.A., Hedemann, H., Seibt, M., Vyvenko, O.F., Schroeter, W., Flink, C., Heiser, T., Hieslmair, H., Weber, E.R. Electrochemical Society	11 国際会議録 Low-Level Cu Contamination of Silicon During Wet Cleaning Studied by Transient Ion Drift Heiser, T., McHugo, S., Hieslmair, H., Weber, E. R. MRS - Materials Research Society
6 国際会議録 A study of the copper-pair related centers in silicon Istratov,A.A., Heiser,T., Hieslmair,H., Flink,C., Kruger,J., Weber,E.R. Trans Tech Publications	12 国際会議録 Progress in Understanding the Physics of Copper in Silicon* Istratov, A.A., Funk, C., Baluasubramanian, S., Weber, E.R., Hieslmair, H., McHugo, S.A., Hedemano, H., Seiht, M., … Electrochemical Society

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