Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C

Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C

著者名:

掲載資料名:

Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

シリーズ名:

Materials science forum

シリーズ巻号:

258-263

発行年:

1997

巻:

Part1

開始ページ:

385

終了ページ:

390

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497874 [0878497870]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018828
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors
回次:	19th
会議開催地:	Aveiro, Portugal
会議開催年:	1997.07.00

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