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Vibrational absorption from oxygen-hydrogen(Oi-H2)complexes in hydrogeBated CZ silicon

著者名:
Pritchard,R.E.
Ashwin,M.J.
Newman,R.C.
Tucker,J.H.
Lightowlers,E.C.
Binns,M.J.
Falster,R.
McQuaid,S.A.
さらに 3 件
掲載資料名:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
シリーズ名:
Materials science forum
シリーズ巻号:
258-263
発行年:
1997
巻:
Part1
開始ページ:
283
終了ページ:
288
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497874 [0878497870]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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