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The role of non-radiative defects in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy

著者名:
Buyanova,I.A.
Chen,W.M.
Pozina,G.
Monemar,B.
Ni,W.X.
Hansson,G.V.
さらに 1 件
掲載資料名:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
シリーズ名:
Materials science forum
シリーズ巻号:
258-263
発行年:
1997
巻:
Part1
開始ページ:
139
終了ページ:
144
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497874 [0878497870]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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