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Recent developments and theory relating to impurity induced LVM:s in GaP and GaAs.(Invited)

著者名:
Newman,R.C.
Grosche,E.G.
Ashwin,M.J.
Davidson,B.R.
Robbie,D.A.
Leigh,R.S.
Sangster,M.J.L.
さらに 2 件
掲載資料名:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
シリーズ名:
Materials science forum
シリーズ巻号:
258-263
発行年:
1997
巻:
Part1
開始ページ:
1
終了ページ:
10
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497874 [0878497870]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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