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In Situ Study of the Accumulation of Ion-Beam-Induced Damage in Single Crystal 3C Silicon Carbide

著者名:
掲載資料名:
Proceedings of the 13th International Conference on Defects in Insulating Materials, ICDIM 96, July 15-19, 1996, Wake Forest University, Winston-Salem, NC 27109, USA
シリーズ名:
Materials science forum
シリーズ巻号:
239-241
発行年:
1997
開始ページ:
155
終了ページ:
158
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497560 [0878497560]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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