Role of nonequilibrium carrier distributions in multiple quantum well InGaAsP-based lasers
- 著者名:
- Hybertsen,M.S. ( Lucent Technologies/Bell Labs. )
- Alam,M.A. ( Lucent Technologies/Bell Labs. )
- Baraff,G.A. ( Lucent Technologies/Bell Labs. )
- Grinberg,A.A. ( Lucent Technologies/Bell Labs. )
- Smith,R.K. ( Lucent Technologies/Bell Labs. )
- 掲載資料名:
- Physics and Simulation of Optoelectronic Devices VI
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3283
- 発行年:
- 1998
- 巻:
- Part 1
- 開始ページ:
- 375
- 終了ページ:
- 383
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819427229 [0819427225]
- 言語:
- 英語
- 請求記号:
- P63600/3283
- 資料種別:
- 国際会議録
類似資料:
SPIE - The International Society for Optical Engineering |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
3
国際会議録
Rote of p-doping profile in InGaAsP multiquantum well lasers:comparison of simulation and experiment
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |