Characterization of Ultra Thin Layers by Rutherford Backscattering Spectrometry

Characterization of Ultra Thin Layers by Rutherford Backscattering Spectrometry

著者名:

Brijs,B.

掲載資料名:

Analytical and diagnostic techniques for semiconductor materials, devices and processes : joint proceedings of the symposia on ALTECH 99, satellite symposium to ESSDERC 99, Leuven, Belgium [and] the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3895

発行年:

1999

開始ページ:

160

終了ページ:

169

出版情報:

Pennington, N.J.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819434975 [0819434973]

言語:

英語

請求記号:

P63600/3895

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018561
シリーズID:	PA00000029
会議名:	ALTECH ; ESSDERC ; Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices
回次:	1999
会議開催地:	Leuven, Belgium
会議開催年:	1999.00.00

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3 国際会議録 Comparative Growth Kinetics of SiGe in a Commercial Reduced Pressure Chemical Vapor Deposition EPI Reactor and Anomalies During Growth of Thin Si Layers on SiGe Caymax, Matty, Loo, Roger, Brijs, Bert, Vandervorst, Wilfried, Howard, David J., Kimura, Kenji, Nakajima, Kaoru MRS - Materials Research Society	9 国際会議録 Analysis of Selectively Grown Epitaxial Si1-xGex by Spectroscopic Ellipsometry and Comparison with RBS and SIMS Loo,R., Caymax,M., Libezny,M., Blavier,G., Brijs,B., Geene,L., Vandervorst,W. SPIE - The International Society for Optical Engineering
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