Characterization of gate electrode etch process for 0.25 ｦﾌm extended to 0.18 ｦﾌm

Characterization of gate electrode etch process for 0.25 ｦﾌm extended to 0.18 ｦﾌm

著者名:

Gerung,H. ( Chartered Semiconductor Manufacturing Ltd. )
Chhagan,V.K.
Yelehanka,P.R.
Zhou,M.S.
Hui,J.K.L.

掲載資料名:

Process and equipment control in microelectronic manufacturing : 19-20 May 1999, Edinburgh, Scotland

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3742

発行年:

1999

開始ページ:

96

終了ページ:

104

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819432223 [0819432229]

言語:

英語

請求記号:

P63600/3742

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018547
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing Technologies : Process and Wquipment Control in Microelectronic Manufacturin
回次:	1999
会議開催地:	Edinburgh, Scotland
会議開催年:	1999.05.19-1999.05.20

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