Leakage current reduction of metal-semiconductor-metal photodetectors by using a thin interfacial silicon dioxide layer

Leakage current reduction of metal-semiconductor-metal photodetectors by using a thin interfacial silicon dioxide layer

著者名:

Seto,M. ( Philips Research Labs. )
Rochefort,C.
Jager,S.de

掲載資料名:

Silicon-based optoelectronics : 27-28 January 1999, San Jose, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3630

発行年:

1999

開始ページ:

222

終了ページ:

230

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819431004 [0819431001]

言語:

英語

請求記号:

P63600/3630

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018537
シリーズID:	PA00000029
会議名:	Photonics West : Silicon-Based Optoelectronics
回次:	1999
会議開催地:	San Jose, CA, USA
会議開催年:	1999.01.27-1999.01.28

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