Blank Cover Image

New purged UV spectroscopic ellipsometer to characterize thin films and multilayers at 157 nm

著者名:
Boher,P. ( SOPRA S.A. )
Piel,J.P.
Evrard,P.
Defranoux,C.
Espinosa,M.
Stehle,J.L.P.
さらに 1 件
掲載資料名:
Metrology, inspection, and process control for microlithography XIV : 28 February - 2 March 2000, San Clara, California
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3998
発行年:
2000
開始ページ:
379
終了ページ:
389
出版情報:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819436160 [081943616X]
言語:
英語
請求記号:
P63600/3998
資料種別:
国際会議録

類似資料:

1 国際会議録 New purged UV spectroscopic ellipsometer to characterize thin films and multilayers at 157 nm

Boher,P., Evrard,P., Piel,J.-P., Stehle,J.-L.P.

SPIE-The International Society for Optical Engineering
7 国際会議録 New instrument to characterize materials and optics for 157-nm lithography

Boher,P., Evrard,P., Piel,J.-P., Stehle,J.-L.P.

SPIE-The International Society for Optical Engineering
2 国際会議録 A new purged UV spectroscopic ellipsometer to characterize 157 nm nanolithographic materials

Boher, Pierre, Piel, Jean Philippe, Evrard, Patrick, Stehle, Jean Louis

MRS-Materials Research Society
8 国際会議録 Characterization of resists and antireflective coatings by spectroscopic ellipsometry in the UV and deep-UV range

Boher,P., Piel,J.P., Defranoux,C., Stehle,J.-L., Hennet,L.

SPIE-The International Society for Optical Engineering
3 国際会議録 Combined metrology including VUV spectroscopic ellipsometer and grazing x-ray reflectance for precise characterization of thin films and multilayers at 157 nm

Boher,P., Evrard,P., Piel,J.P., Stehle,J.L.

SPIE-The International Society for Optical Engineering
9 国際会議録 Precise measurement of ARC optical indices in the deep-UV range by variable-angle spectroscopic ellipsometry

Boher,P., Stehle,J.L., Piel,J.P., Defranoux,C., Hennet,L.

SPIE-The International Society for Optical Engineering
4 国際会議録 New method for determination of the photoresist Dill parameters using spectroscopic ellipsometry

Boher,P., Defranoux,C., Piel,J.P., Stehle,J.L.P.

SPIE - The International Society for Optical Engineering
10 国際会議録 New process for manufacturing thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing

Boher,P., Stehle,J.L.P., Piel,J.P., Fogarassy,E.

SPIE-The International Society for Optical Engineering
5 国際会議録 Combined metrology in cluding VUV spectroscopic ellipsometry and grazing x-ray reflectance for precise characterization of thin films and multilayers at 157 nm

Boher,P., Evrard,P., Piel,J.-P., Janicot,S., Stehle,J.-L.

SPIE-The International Society for Optical Engineering
11 国際会議録 IR spectroscopic ellipsometry for industrial characterization of semiconductors

Boher,P., Bucchia,M., Piel,J.P., Defranoux,C., Stehle,J.L., Pickering,C.

SPIE-The International Society for Optical Engineering
6 国際会議録 * Characterization of ultra-thin Gate Dielectrics by Grazing X-Ray Reflectance and Spectroscopic Ellipsometry on the Same Instrument

Boher, P., Stehle, J.L., Defranoux, C., Bourtault, S., Piel, J.P., Evrard, P.

Electrochemical Society
12 国際会議録 Real Time Spectroscopic Ellipsometry: A New Tool to Characterize SOI Wafers

Boher, P., Piel, J.P., Stehle, J.L.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12