Modeling metal thin film growth under IPVD conditions using molecular dynamics rates in a level set approach

Modeling metal thin film growth under IPVD conditions using molecular dynamics rates in a level set approach

著者名:

掲載資料名:

Fundamental mechanisms of low-energy-beam-modified surface growth and processing : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

585

発行年:

2000

開始ページ:

233

出版情報:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994935 [1558994939]

言語:

英語

請求記号:

M23500/585

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018511
シリーズID:	PA00000011
会議名:	Fundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth and Processing : Symposium
回次:	1999
会議開催地:	Boston, MA, USA
会議開催年:	1999.11.29-1999.12.02

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