Damage and Strain in Epitaxial Ge<sub>0.10</sub>Si<sub>0.90</sub> After Si Implantation from 40 to 150 °C

Damage and Strain in Epitaxial Ge_0.10Si_0.90 After Si Implantation from 40 to 150 °C

著者名:

Vantomme, A.

掲載資料名:

Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

326

発行年:

1994

開始ページ:

121

出版情報:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992252 [1558992251]

言語:

英語

請求記号:

M23500/326

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018465
シリーズID:	PA00000011
会議名:	Symposium on growth, processing, and characterization of semiconductor heterostructures
回次:	1993
会議開催地:	Boston, MA, USA
会議開催年:	1993.11.29-1993.12.02

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Damage and Strain in Epitaxial Ge0.10Si0.90 After Si Implantation from 40 to 150 °C

類似資料:

Damage and Strain in Epitaxial Ge_0.10Si_0.90 After Si Implantation from 40 to 150 °C