EXPERIMENTAL STUDY OF PRECIPITATION PROCESSES IN OXYGEN IMPLANTED SILICON

EXPERIMENTAL STUDY OF PRECIPITATION PROCESSES IN OXYGEN IMPLANTED SILICON

著者名:

Weber, R.

掲載資料名:

Materials synthesis and processing using ion beams : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

316

発行年:

1994

開始ページ:

729

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992153 [1558992154]

言語:

英語

請求記号:

M23500/316

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018464
シリーズID:	PA00000011
会議名:	Symposium on materials synthesis and processing using ion beams
回次:	1993
会議開催地:	Boston, MA, USA
会議開催年:	1993.11.29-1993.12.03

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2 国際会議録 Quantum-Sized Silicon Precipitates in Silicon-Implanted and Pulse-Annealed Silicon Dioxide Films: Photoluminescence and Structural Transformations Tyschenko, I. E., Kachurin, G. A., Zhuravlev, K. S., Pazdnikov, N. A., Volodin, V. A., Gutakovsky, A. K., Leier, A. F., … MRS - Materials Research Society	8 国際会議録 Raman and HRTEM investigations of Ge nanocrystals produced by Ge + -ion implantation of SiO2 films and subsequent high-pressure annealing Tyschenko, I.E., Talochkin, A.B., Cherkov, A.G., Zhuravlev, K.S., Misiuk, A., Yankov, R.A., Skorupa, W. SPIE-The International Society for Optical Engineering
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