A NEW COMPUTATIONALLY-EFFICIENT 2-D MODEL FOR BORON IMPLANTS INTO (100) SINGLE-CRYSTAL SILICON

A NEW COMPUTATIONALLY-EFFICIENT 2-D MODEL FOR BORON IMPLANTS INTO (100) SINGLE-CRYSTAL SILICON

著者名:

掲載資料名:

Materials synthesis and processing using ion beams : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

316

発行年:

1994

開始ページ:

623

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992153 [1558992154]

言語:

英語

請求記号:

M23500/316

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018464
シリーズID:	PA00000011
会議名:	Symposium on materials synthesis and processing using ion beams
回次:	1993
会議開催地:	Boston, MA, USA
会議開催年:	1993.11.29-1993.12.03

類似資料:

1 国際会議録 A MORE EFFICIENT APPROACH FOR MONTE CARLO SIMULATION OF DEEPLY-CHANNELED IMPLANTED PROFILES IN SINGLE-CRYSTAL SILICON Yang, Shyh-Horng, Lim, David, Morris, Steven J., Tasch, Al F. MRS - Materials Research Society	7 国際会議録 An Accurate Monte Carlo Binary Collision Model for BF2 Implants into (100) Single-Crystal Silicon Yang, S.-H., Morris, S., Tian, S., Morris, M., Parab, K., Obradovich, B., Tasch, A. Electrochemical Society
2 国際会議録 Development and Demonstration of a Two-Dimensional, Accurate and Computationally-Efficient Model for Boron Implantation into Single-Crystal Silicon Through … Morris, S., Lim, D., Yang, S. -H., Tian, S., Parab, K., Tasch, A. F. MRS - Materials Research Society	8 国際会議録 Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon Obradovic,B.J., Morris,S.J., Morris,M.F., Tian,S., Wang,G., Beardmore,K., Snell,C., Jackson,J., Baummann,S., Tasch,A.F. SPIE-The International Society for Optical Engineering
3 国際会議録 A NEW COMPUTATIONALLY-EFFICIENT TWO-DIMENSIONAL MODEL FOR BORON IMPLANTATION INTO SINGLE-CRYSTAL SILICON Klein, K. M., Park, C., Yang, S., Morris, S., Do, V., Tasch, A. F. Materials Research Society	9 国際会議録 The Detailed Dependence of Implanted Phosphorus Profiles in (100) Single-Crystal Si on Key Implant Parameters Ghante, V., Lam, L. M., Morris, S., Yang, S. -H., Tasch, A. F., Kamenista, D., Sheng, J., Magee, C. MRS - Materials Research Society
4 国際会議録 A Two-Dimensional, Accurate and Computationally Efficient Model for Boron Implantation through Oxide Layers into Silicon Morris, S., Lim, D., Yang, S.-H., Tian, S., Parab, K., Tasch, A.F. Electrochemical Society	10 国際会議録 Detailed Analysis and Computationally Efficient Modeling of Ultra-Shallow Dopant Profiles Obtained by Low Energy B, BF2, and As Ion Implantation Parab, K. B., Yang, S. -H., Morris, S. J., Tian, S., Morris, M., Obradovich, B., Tasch, A. F., Kamenitsa, D., Simonton, … MRS - Materials Research Society
5 国際会議録 THE DETAILED VARIATION OF BORON AND FLUORINE PROFILES WITH TILT AND ROTATION ANGLES FOR BF2+ ION IMPLANTATION IN (100) SILICON Gupta, Puneet, Park, Changhae, Klein, Kevin, Yang, Shyh-horng, Morris, Steve, Do, Vu, Tasch, Al, Simonton, Robert, Lux, … Materials Research Society	11 国際会議録 An Electronic Stopping Power Model in Single-Crystal Silicon From a Few KeV to Several MeV Morris, S. J., Obradovic, B., Yang, S-H., Tasch, A. F., Rubin, L. MRS - Materials Research Society
6 国際会議録 A New Local Electronic Stopping Model for the Monte Carlo Simulation of Arsenic Ion Implantation into (100) Single-Crystal Silicon Yang, S.-H., Morris, S., Tian, S., Parab, K., Tasch, A. F., Echenique, P. M., Capaz, R., Joannopoulos, J. MRS - Materials Research Society	12 国際会議録 An Electronic Stopping Power Model in Single-Crystal Silicon from a Few KeV to Several MeV Morris, S. J., Obradovic, B., Yang, S-H., Tasch, A. F., Rubin, L. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12