Comparative Growth Kinetics of SiGe in a Commercial Reduced Pressure Chemical Vapor Deposition EPI Reactor and Anomalies During Growth of Thin Si Layers on SiGe

Comparative Growth Kinetics of SiGe in a Commercial Reduced Pressure Chemical Vapor Deposition EPI Reactor and Anomalies During Growth of Thin Si Layers on SiGe

著者名:

Caymax, Matty

Loo, Roger

Brijs, Bert

Vandervorst, Wilfried

掲載資料名:

Epitaxy and applications of si-based heterostructures : symposium held April 13-17, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

533

発行年:

1998

開始ページ:

339

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994393 [1558994394]

言語:

英語

請求記号:

M23500/533

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018459
シリーズID:	PA00000011
会議名:	Symposium on epitaxy and applications of si-based heterostructures
回次:	1998
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.17

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