The Effect of Growth Temperature and Substrate Misorientation on Degree of Order and Antiphase Domain Size in Ga0.52In0.48P Epilayers Grown on GaAs(001) Substrates by GS-MBE

The Effect of Growth Temperature and Substrate Misorientation on Degree of Order and Antiphase Domain Size in Ga0.52In0.48P Epilayers Grown on GaAs(001) Substrates by GS-MBE

著者名:

掲載資料名:

Electron microscopy of semiconducting materials and ULSI devices : symposium held Aprl 15-16, 1998, San Francisco, California, U. S. A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

523

発行年:

1998

開始ページ:

235

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994294 [1558994297]

言語:

英語

請求記号:

M23500/523

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018458
シリーズID:	PA00000011
会議名:	Symposiujm on electron microscopy of semiconducting materials and ULSI devices
回次:	1998
会議開催地:	San Francisco, California, USA
会議開催年:	1998.04.15-1998.04.16

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2 国際会議録 Self-assembling InP/In0.48Ga0.52P quantum dots grown by MBE Kurtenbach A., Eberl K., Brunner K., Abstreiter G. Kluwer Academic Publishers	8 国際会議録 1.5μm Range Self-Organized In0.65Ga0.35As/In0.52Al0.48As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy Hyodo, K., Ohno, Y., Kanamori, H., Kitada, T., shimomura, S., Hiyamizu, S. Materials Research Society
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