Dissociation of Deuterium-Defect Complexes in Ion-Implanted Epitaxial 4H-SiC

Dissociation of Deuterium-Defect Complexes in Ion-Implanted Epitaxial 4H-SiC

著者名:

掲載資料名:

Hydrogen in semiconductors and metals : symposium held April 13-17, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

513

発行年:

1998

開始ページ:

439

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994195 [155899419X]

言語:

英語

請求記号:

M23500/513

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018457
シリーズID:	PA00000011
会議名:	Symposium on hydrogen in semiconductors and metals
回次:	1998
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.17

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