Blank Cover Image

Deuterium Diffusion, Trapping, and Stability in Buried Silicon Dioxide Layers

著者名:
掲載資料名:
Hydrogen in semiconductors and metals : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
513
発行年:
1998
開始ページ:
319
出版情報:
Warrendale, Penn.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994195 [155899419X]
言語:
英語
請求記号:
M23500/513
資料種別:
国際会議録

類似資料:

1 国際会議録 Hydrogen effusion from doped monocrystalline B-doped silicon

Ballutaud,D., Mierry,P.de, Pesant,J.C., Rizk,R., Boutry-Forveille,A., Aucouturier,M.

Trans Tech Publications
7 国際会議録 MODELING OF THE DIFFUSION OF HYDROGEN IN SILICON

Mathoit, D., Ballutaud, D., De Mierry, P., Aucouturier, M.

Materials Research Society
2 国際会議録 Nanocluster-rich silicon dioxide layers: electroluminescence and charge trapping

Gebel, T., Rebohle, L., Yankov, R.A., Nazarov, A.N., Skorupa, W.

SPIE - The International Society of Optical Engineering
8 国際会議録 HYDROGEN DIFFUSION IN N-TYPE SILICON. COMPARISON WITH P-TYPE SILICON

Rizk, R., de Mierry, P., Ballutaud, D., Aucouturier, M., Mathiot, D.

Materials Research Society
3 国際会議録 Hydrogen Trapping and Stability at the Polycrystalline CVD Diamond Surface and in the Subsurface Layers

Ballutaud, D., Jomard, F., Vigneron, J., Canava, B., Mer, C., Bergonzo, P.

Electrochemical Society
9 国際会議録 On the Formation of Porous Silicon: Role of Hydrogen

Peou, J.E., de Villeneuve, C. Henry, Boutry-Forveille, A., Levy-Clement, C., Allongue, P.

Electrochemical Society
4 国際会議録 Hydrogen Diffusion in Polycrystalline Boron Doped and Undoped Diamond

Ballutaud, D., Bouty-Forveille, A., Laroche, J.-M., Simon, N., Girard, H., Herlem, M., Etcheberry, A.

Materials Research Society
10 国際会議録 INTERACTION OF DEUTERIUM WITH BURIED OXIDES IN SILICON

Myers, S. M.

Materials Research Society
5 国際会議録 Introduction and diffusion of hydrogen in silicon

Chari. A, De Mierry. P, Ballutaud. D, Aucouturier. M

Kluwer Academic Publishers
11 国際会議録 Trapping and Annealing of Charge Generated by FN Electron Injection in Buried Oxide of SIMOX and UNIBOND SOI Structures

Nazarov, A., Kilchyska, V., Barchuk, I., Tkachenko, A.

Electrochemical Society
6 国際会議録 MICROSTRUCTURE, ELECTRICAL PROPETIES AND PASSI- VATION OF DEFECTS AT THE SILICON-SILICON-DIOXIDE INTERFACE

Correia, A., Ballutaud, D., Maurice, J.-L.

Electrochemical Society
12 国際会議録 Plasma Hydrogenation of a Buried Trap Layer in Silicon: Formation of a Platelet Layer

Usenko, A.X, Carr., W.N., Chen, B.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12