Strontium Bismuth Tantalate-Based Ferroelectric Gate Field Effect Transistor With Yttrium Oxide as the Buffer Layer

Strontium Bismuth Tantalate-Based Ferroelectric Gate Field Effect Transistor With Yttrium Oxide as the Buffer Layer

著者名:

掲載資料名:

Ferroelectric thin films VI : symposium held November 30-December 4, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

493

発行年:

1998

開始ページ:

465

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993983 [1558993983]

言語:

英語

請求記号:

M23500/493

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018455
シリーズID:	PA00000011
会議名:	Symposium on ferroelectric thin films
回次:	6th
会議開催地:	Boston, MA, USA
会議開催年:	1997.11.30-1997.12.04

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